IP Library › Granted Patent US 6,596,580
Granted Patent Utility
US 6,596,580 · App. 09/982,574

Recess Pt structure for high k stacked capacitor in DRAM and FRAM, and the method to form this structure

Inventors: Jingyu Lian, Greg Costrini, Laertis Economikos, Michael Wise
Patented Case View Patent ↗
Granted: Jul 22, 2003 Filed: Oct 18, 2001
Inventors
Jingyu Lian
Greg Costrini
Laertis Economikos
Michael Wise
Assignees (at issue)
Infineon Technologies AG
International Business Machines Corporation

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Quick Facts
Patent No.
US 6,596,580
App. No.
09/982,574
Filed
2001-10-18
Granted
2003-07-22
Kind
B2