Granted Patent
Utility
US 6,599,795 · App. 09/775,713
Method of manufacturing semiconductor device including a step of forming a silicide layer, and semiconductor device manufactured thereby
Inventor:
Tamotsu Ogata
Patented Case
View Patent ↗
Granted: Jul 29, 2003
Filed: Feb 5, 2001
Inventor
Tamotsu Ogata
Assignee (at issue)
MITSUBISHI ELECTRIC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.