Granted Patent
Utility
US 6,602,808 · App. 10/013,729
Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
Inventors:
Yoshikazu Tanabe, Toshiaki Nagahama, Nobuyoshi Natsuaki, Yasuhiko Nakatsuka
Patented Case
View Patent ↗
Granted: Aug 5, 2003
Filed: Dec 13, 2001
Inventors
Yoshikazu Tanabe
Toshiaki Nagahama
Nobuyoshi Natsuaki
Yasuhiko Nakatsuka
Assignees (at issue)
HITACHI, LTD.
Hitachi Tokyo Electronics Co., Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.