IP Library Granted Patent US 6,603,685
Granted Patent Utility
US 6,603,685 · App. 09/778,261

Semiconductor integrated circuit device capable of ensuring reliability of transistor driving high voltage

Inventors: Hideto Hidaka, Hiroaki Tanizaki, Tsukasa Ooishi
Patented Case View Patent ↗
Granted: Aug 5, 2003 Filed: Feb 8, 2001
Inventors
Hideto Hidaka
Hiroaki Tanizaki
Tsukasa Ooishi
Assignees (at issue)
MITSUBISHI ELECTRIC CORPORATION
MITSUBISHI ELECTRIC ENGINEERING COMPANY, LIMITED

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Quick Facts
Patent No.
US 6,603,685
App. No.
09/778,261
Filed
2001-02-08
Granted
2003-08-05
Kind
B2