IP Library Granted Patent US 6,605,848
Granted Patent Utility
US 6,605,848 · App. 10/246,267

Semiconductor device with metal gate electrode and silicon oxynitride spacer

Inventors: Minh Van Ngo, Arvind Halliyal
Patented Case View Patent ↗
Granted: Aug 12, 2003 Filed: Sep 18, 2002
Inventors
Minh Van Ngo
Arvind Halliyal
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,605,848
App. No.
10/246,267
Filed
2002-09-18
Granted
2003-08-12
Kind
B2