IP Library Granted Patent US 6,607,594
Granted Patent Utility
US 6,607,594 · App. 10/020,574

Method for producing silicon single crystal

Inventors: Hideki Fujiwara, Manabu Nishimoto, Isamu Miyamoto, Hiroshi Morita
Patented Case View Patent ↗
Granted: Aug 19, 2003 Filed: Dec 18, 2001
Inventors
Hideki Fujiwara
Manabu Nishimoto
Isamu Miyamoto
Hiroshi Morita
Assignee (at issue)
SUMITOMO METAL INDUSTRIES, LTD.

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Quick Facts
Patent No.
US 6,607,594
App. No.
10/020,574
Filed
2001-12-18
Granted
2003-08-19
Kind
B2