Granted Patent
Utility
US 6,607,949 · App. 09/998,311
Method for fabricating polysilicon thin film transistor with improved electrical characteristics
Inventors:
Binn Kim, Hae-Yeol Kim, Dae Hyun Nam
Patented Case
View Patent ↗
Granted: Aug 19, 2003
Filed: Dec 3, 2001
Inventors
Binn Kim
Hae-Yeol Kim
Dae Hyun Nam
Assignee (at issue)
LG Philips LCD Co., Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.