Granted Patent
Utility
US 6,607,978 · App. 10/212,739
Method of making a semiconductor device with alloy film between barrier metal and interconnect
Inventor:
Yoshihisa Matsubara
Patented Case
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Granted: Aug 19, 2003
Filed: Aug 7, 2002
Inventor
Yoshihisa Matsubara
Assignee (at issue)
NEC Electronics Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.