IP Library › Granted Patent US 6,617,261
Granted Patent Utility
US 6,617,261 · App. 10/017,599

Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates

Inventors: William S. Wong, David K. Biegelsen, Michael A. Kneissl
Patented Case View Patent ↗
Granted: Sep 9, 2003 Filed: Dec 18, 2001
Inventors
William S. Wong
David K. Biegelsen
Michael A. Kneissl
Assignee (at issue)
Xerox Corporation

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Quick Facts
Patent No.
US 6,617,261
App. No.
10/017,599
Filed
2001-12-18
Granted
2003-09-09
Kind
B2