Granted Patent
Utility
US 6,617,639 · App. 10/176,594
Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling
Inventors:
Zhigang Wang, Xin Guo, Yue-Song He
Patented Case
View Patent ↗
Granted: Sep 9, 2003
Filed: Jun 21, 2002
Inventors
Zhigang Wang
Xin Guo
Yue-Song He
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.