Granted Patent
Utility
US 6,624,088 · App. 10/118,946
Method of forming low dielectric silicon oxynitride spacer films highly selective to etchants
Inventor:
John T. Moore
Patented Case
View Patent ↗
Granted: Sep 23, 2003
Filed: Apr 10, 2002
Inventor
John T. Moore
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.