Granted Patent
Utility
US 6,652,646 · App. 10/260,239
Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditions
Inventors:
Robert J. Falster, Vladimir V. Voronkov, Paolo Mutti
Patented Case
View Patent ↗
Granted: Nov 25, 2003
Filed: Sep 30, 2002
Inventors
Robert J. Falster
Vladimir V. Voronkov
Paolo Mutti
Assignee (at issue)
MEMC Electronic Materials, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.