Granted Patent
Utility
US 6,652,648 · App. 09/841,084
Method for fabricating GaN single crystal substrate
Inventor:
Sung Soo Park
Patented Case
View Patent ↗
Granted: Nov 25, 2003
Filed: Apr 25, 2001
Inventor
Sung Soo Park
Assignee (at issue)
SAMSUNG CORNING CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.