Granted Patent
Utility
US 6,656,780 · App. 09/916,518
Method of manufacturing a semiconductor device having nitrogen ions by twice RTA processes
Inventor:
Hitomi Watanabe
Patented Case
View Patent ↗
Granted: Dec 2, 2003
Filed: Jul 27, 2001
Inventor
Hitomi Watanabe
Assignee (at issue)
SEIKO INSTRUMENTS INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.