Granted Patent
Utility
US 6,661,040 · App. 10/137,289
Semiconductor device with insulating gate surrounded by impurity layers
Inventor:
Hiroyuki Takashino
Patented Case
View Patent ↗
Granted: Dec 9, 2003
Filed: May 3, 2002
Inventor
Hiroyuki Takashino
Assignee (at issue)
MITSUBISHI ELECTRIC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.