Granted Patent
Utility
US 6,664,595 · App. 09/533,816
Power MOSFET having low on-resistance and high ruggedness
Inventors:
Chong-man Yun, Tae Hoon Kim
Patented Case
View Patent ↗
Granted: Dec 16, 2003
Filed: Mar 24, 2000
Inventors
Chong-man Yun
Tae Hoon Kim
Assignee (at issue)
Fairchild Korea Semiconductor Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.