IP Library › Granted Patent US 6,673,689
Granted Patent Utility
US 6,673,689 · App. 10/159,892

Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same

Inventors: Husam N. Al-Shareef, Scott DeBoer, Randhir P. S. Thakur
Patented Case View Patent ↗
Granted: Jan 6, 2004 Filed: May 30, 2002
Inventors
Husam N. Al-Shareef
Scott DeBoer
Randhir P. S. Thakur
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 6,673,689
App. No.
10/159,892
Filed
2002-05-30
Granted
2004-01-06
Kind
B2