Granted Patent
Utility
US 6,673,693 · App. 09/917,554
Method for forming a trench in a semiconductor substrate
Inventor:
Markus Kirchhoff
Patented Case
View Patent ↗
Granted: Jan 6, 2004
Filed: Jul 27, 2001
Inventor
Markus Kirchhoff
Assignee (at issue)
Infineon Technologies AG
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.