IP Library Granted Patent US 6,693,022
Granted Patent Utility
US 6,693,022 · App. 10/226,764

CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures

Inventors: Joerg Dreybrodt, Dirk Drescher, Ralf Zedlitz, Stephan Wege
Patented Case View Patent ↗
Granted: Feb 17, 2004 Filed: Aug 23, 2002
Inventors
Joerg Dreybrodt
Dirk Drescher
Ralf Zedlitz
Stephan Wege
Assignee (at issue)
Infineon Technologies AG

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Quick Facts
Patent No.
US 6,693,022
App. No.
10/226,764
Filed
2002-08-23
Granted
2004-02-17
Kind
B2