Granted Patent
Utility
US 6,693,321 · App. 10/145,952
Replacing layers of an intergate dielectric layer with high-K material for improved scalability
Inventors:
Wei Zheng, Arvind Halliyal, Mark Randolph
Patented Case
View Patent ↗
Granted: Feb 17, 2004
Filed: May 15, 2002
Inventors
Wei Zheng
Arvind Halliyal
Mark Randolph
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.