Granted Patent
Utility
US 6,699,786 · App. 10/313,290
Method for forming a semiconductor device that uses a low resistance tungsten silicide layer with a strong adherence to an underlayer
Inventor:
Ziyuan Liu
Patented Case
View Patent ↗
Granted: Mar 2, 2004
Filed: Dec 6, 2002
Inventor
Ziyuan Liu
Assignee (at issue)
NEC Electronics Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.