IP Library › Granted Patent US 6,700,149
Granted Patent Utility
US 6,700,149 · App. 10/113,421

Circuit configuration for forming a MOS capacitor with a lower voltage dependence and a lower area requirement

Inventors: Thomas Tille, Doris Schmitt-Landsiedel, Jens Sauerbrey
Patented Case View Patent ↗
Granted: Mar 2, 2004 Filed: Apr 1, 2002
Inventors
Thomas Tille
Doris Schmitt-Landsiedel
Jens Sauerbrey
Assignee (at issue)
Infineon Technologies AG

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Quick Facts
Patent No.
US 6,700,149
App. No.
10/113,421
Filed
2002-04-01
Granted
2004-03-02
Kind
B2