Granted Patent
Utility
US 6,703,249 · App. 10/125,150
Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect
Inventors:
Takeshi Okazawa, Hideaki Numata
Patented Case
View Patent ↗
Granted: Mar 9, 2004
Filed: Apr 18, 2002
Inventors
Takeshi Okazawa
Hideaki Numata
Assignee (at issue)
NEC Electronics Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.