IP Library Granted Patent US 6,706,540
Granted Patent Utility
US 6,706,540 · App. 10/361,585

Method of manufacturing a semiconductor device with a hydrogen barrier layer

Inventors: Yukinobu Hikosaka, Yasutaka Ozaki, Kazuaki Takai
Patented Case View Patent ↗
Granted: Mar 16, 2004 Filed: Feb 11, 2003
Inventors
Yukinobu Hikosaka
Yasutaka Ozaki
Kazuaki Takai
Assignee (at issue)
Fujitsu Limited

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Quick Facts
Patent No.
US 6,706,540
App. No.
10/361,585
Filed
2003-02-11
Granted
2004-03-16
Kind
B2