Granted Patent
Utility
US 6,706,567 · App. 09/863,452
High voltage device having polysilicon region in trench and fabricating method thereof
Inventor:
Lee-Yeun Hwang
Patented Case
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Granted: Mar 16, 2004
Filed: May 24, 2001
Inventor
Lee-Yeun Hwang
Assignee (at issue)
SK hynix Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.