Granted Patent
Utility
US 6,706,604 · App. 10/104,012
Method of manufacturing a trench MOS gate device
Inventors:
Hiroshi Inagawa, Nobuo Machida, Kentaro Ooishi
Patented Case
View Patent ↗
Granted: Mar 16, 2004
Filed: Mar 25, 2002
Inventors
Hiroshi Inagawa
Nobuo Machida
Kentaro Ooishi
Assignee (at issue)
HITACHI, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.