Granted Patent
Utility
US 6,709,513 · App. 10/188,038
Substrate including wide low-defect region for use in semiconductor element
Inventors:
Toshiaki Fukunaga, Toshiaki Kuniyasu, Mitsugu Wada, Yoshinori Hotta
Patented Case
View Patent ↗
Granted: Mar 23, 2004
Filed: Jul 3, 2002
Inventors
Toshiaki Fukunaga
Toshiaki Kuniyasu
Mitsugu Wada
Yoshinori Hotta
Assignee (at issue)
Fujitsu Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.