Granted Patent
Utility
US 6,709,767 · App. 09/919,280
In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture
Inventors:
Tsann Lin, Daniele Mauri
Patented Case
View Patent ↗
Granted: Mar 23, 2004
Filed: Jul 31, 2001
Inventors
Tsann Lin
Daniele Mauri
Assignee (at issue)
Hitachi Global Storage Technologies Netherlands B.V.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.