IP Library Granted Patent US 6,709,989
Granted Patent Utility
US 6,709,989 · App. 09/885,409

Method for fabricating a semiconductor structure including a metal oxide interface with silicon

Inventors: Jamal Ramdani, Ravindranath Droopad, Zhiyi Yu
Patented Case View Patent ↗
Granted: Mar 23, 2004 Filed: Jun 21, 2001
Inventors
Jamal Ramdani
Ravindranath Droopad
Zhiyi Yu
Assignee (at issue)
Motorola, Inc.

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Quick Facts
Patent No.
US 6,709,989
App. No.
09/885,409
Filed
2001-06-21
Granted
2004-03-23
Kind
B2