IP Library › Granted Patent US 6,713,370
Granted Patent Utility
US 6,713,370 · App. 10/460,901

Process for the preparation of an ideal oxygen precipitating silicon wafer capable of forming an enhanced denuded zone

Inventor: Robert J. Falster
Patented Case View Patent ↗
Granted: Mar 30, 2004 Filed: Jun 13, 2003
Inventor
Robert J. Falster
Assignee (at issue)
MEMC Electronic Materials, Inc.

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Quick Facts
Patent No.
US 6,713,370
App. No.
10/460,901
Filed
2003-06-13
Granted
2004-03-30
Kind
B2