Granted Patent
Utility
US 6,716,707 · App. 10/387,303
Method for making a semiconductor device having a high-k gate dielectric
Inventors:
Justin K. Brask, Timothy E. Glassman, Mark L. Doczy, Matthew V. Metz
Patented Case
View Patent ↗
Granted: Apr 6, 2004
Filed: Mar 11, 2003
Inventors
Justin K. Brask
Timothy E. Glassman
Mark L. Doczy
Matthew V. Metz
Assignee (at issue)
Intel Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.