Granted Patent
Utility
US 6,716,710 · App. 10/126,207
Using a first liner layer as a spacer in a semiconductor device
Inventors:
Hsiao-Han Thio, Nian Yang, Zhigang Wang
Patented Case
View Patent ↗
Granted: Apr 6, 2004
Filed: Apr 19, 2002
Inventors
Hsiao-Han Thio
Nian Yang
Zhigang Wang
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.