Granted Patent
Utility
US 6,717,192 · App. 10/337,107
Schottky gate field effect transistor
Inventor:
Yosuke Miyoshi
Patented Case
View Patent ↗
Granted: Apr 6, 2004
Filed: Jan 6, 2003
Inventor
Yosuke Miyoshi
Assignee (at issue)
NEC Compound Semiconductor Devices, Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.