IP Library › Granted Patent US 6,717,850
Granted Patent Utility
US 6,717,850 · App. 10/313,676

Efficient method to detect process induced defects in the gate stack of flash memory devices

Inventors: Jiang Li, Nian Yang, Zhigang Wang, John Jianshi Wang
Patented Case View Patent ↗
Granted: Apr 6, 2004 Filed: Dec 5, 2002
Inventors
Jiang Li
Nian Yang
Zhigang Wang
John Jianshi Wang
Assignee (at issue)
Advanced Micro Devices, Inc.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,717,850
App. No.
10/313,676
Filed
2002-12-05
Granted
2004-04-06
Kind
B1