Granted Patent
Utility
US 6,720,196 · App. 10/138,420
Nitride-based semiconductor element and method of forming nitride-based semiconductor
Inventors:
Tatsuya Kunisato, Yasuhiko Nomura, Takashi Kano, Hiroki Ohbo, Masayuki Hata
Patented Case
View Patent ↗
Granted: Apr 13, 2004
Filed: May 6, 2002
Inventors
Tatsuya Kunisato
Yasuhiko Nomura
Takashi Kano
Hiroki Ohbo
Masayuki Hata
Assignee (at issue)
SANYO ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.