Granted Patent
Utility
US 6,720,632 · App. 09/865,546
Semiconductor device having diffusion layer formed using dopant of large mass number
Inventor:
Taiji Noda
Patented Case
View Patent ↗
Granted: Apr 13, 2004
Filed: May 29, 2001
Inventor
Taiji Noda
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.