Granted Patent
Utility
US 6,723,608 · App. 10/406,311
Method for manufacturing a semiconductor device having a layered gate electrode
Inventor:
Tsutomu Hayakawa
Patented Case
View Patent ↗
Granted: Apr 20, 2004
Filed: Apr 4, 2003
Inventor
Tsutomu Hayakawa
Assignee (at issue)
ELPIDA MEMORY, INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.