Granted Patent
Utility
US 6,723,665 · App. 10/404,546
Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
Inventors:
Yoshikazu Tanabe, Toshiaki Nagahama, Nobuyoshi Natsuaki, Yasuhiko Nakatsuka
Patented Case
View Patent ↗
Granted: Apr 20, 2004
Filed: Apr 2, 2003
Inventors
Yoshikazu Tanabe
Toshiaki Nagahama
Nobuyoshi Natsuaki
Yasuhiko Nakatsuka
Assignees (at issue)
Renesas Technology Corporation
Hitachi Tokyo Electronics Co., Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.