Granted Patent
Utility
US 6,724,967 · App. 09/799,491
Method of making a functional device with deposited layers subject to high temperature anneal
Inventors:
Luc Ouellet, Annie Dallaire
Patented Case
View Patent ↗
Granted: Apr 20, 2004
Filed: Mar 7, 2001
Inventors
Luc Ouellet
Annie Dallaire
Assignee (at issue)
DALSA Semiconductor Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.