Granted Patent
Utility
US 6,726,764 · App. 10/008,812
Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
Inventors:
Paolo Mutti, Vladmir V. Voronknov
Patented Case
View Patent ↗
Granted: Apr 27, 2004
Filed: Nov 13, 2001
Inventors
Paolo Mutti
Vladmir V. Voronknov
Assignee (at issue)
MEMC Electronic Materials, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.