Granted Patent
Utility
US 6,734,084 · App. 10/603,982
Method of manufacturing a semiconductor device with recesses using anodic oxide
Inventors:
Yoshihiko Nemoto, Masataka Hoshino, Hitoshi Yonemura
Patented Case
View Patent ↗
Granted: May 11, 2004
Filed: Jun 26, 2003
Inventors
Yoshihiko Nemoto
Masataka Hoshino
Hitoshi Yonemura
Assignees (at issue)
MITSUBISHI ELECTRIC CORPORATION
SONY GROUP CORPORATION
Fujitsu Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.