IP Library › Granted Patent US 6,736,993
Granted Patent Utility
US 6,736,993 · App. 09/551,018

Silicon reagents and low temperature CVD method of forming silicon-containing gate dielectric materials using same

Inventors: Chongying Xu, Thomas H. Baum, Bryan C. Hendrix
Patented Case View Patent ↗
Granted: May 18, 2004 Filed: Apr 18, 2000
Inventors
Chongying Xu
Thomas H. Baum
Bryan C. Hendrix
Assignee (at issue)
ADVANCED TECHNOLOGY & MATERIALS CO., LTD.

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Quick Facts
Patent No.
US 6,736,993
App. No.
09/551,018
Filed
2000-04-18
Granted
2004-05-18
Kind
B1