Granted Patent
Utility
US 6,737,700 · App. 10/249,864
Non-volatile memory cell structure and method for manufacturing thereof
Inventors:
Ko-Hsing Chang, Cheng-Yuan Hsu
Patented Case
View Patent ↗
Granted: May 18, 2004
Filed: May 13, 2003
Inventors
Ko-Hsing Chang
Cheng-Yuan Hsu
Assignee (at issue)
POWERCHIP SEMICONDUCTOR CORP.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.