Granted Patent
Utility
US 6,737,721 · App. 09/691,456
Shallow trench isolation structure for a bipolar transistor
Inventor:
Hisamitsu Suzuki
Patented Case
View Patent ↗
Granted: May 18, 2004
Filed: Oct 18, 2000
Inventor
Hisamitsu Suzuki
Assignee (at issue)
NEC Electronics Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.