Granted Patent
Utility
US 6,737,744 · App. 10/093,502
Semiconductor device including porous insulating material and manufacturing method therefor
Inventor:
Shun-ichi Fukuyama
Patented Case
View Patent ↗
Granted: May 18, 2004
Filed: Mar 11, 2002
Inventor
Shun-ichi Fukuyama
Assignee (at issue)
Fujitsu Limited
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.