Granted Patent
Utility
US 6,740,549 · App. 09/927,604
Gate structures having sidewall spacers using selective deposition and method of forming the same
Inventors:
Chih-Hsiang Chen, Guo-Qiang Lo, S. Kevin Lee
Patented Case
View Patent ↗
Granted: May 25, 2004
Filed: Aug 10, 2001
Inventors
Chih-Hsiang Chen
Guo-Qiang Lo
S. Kevin Lee
Assignee (at issue)
Integrated Device Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.