IP Library Granted Patent US 6,740,568
Granted Patent Utility
US 6,740,568 · App. 10/206,875

Method to enhance epitaxial regrowth in amorphous silicon contacts

Inventors: Yun-Yu Wang, Johnathan E. Faltermeier, Colleen Snavely, Michael Maldei, Michael Iwatake, David M. Dobuzinsky, Ravikumar Ramachandran, Viraj Y. Sardesai, Philip L. Flaitz, Lisa Y. Ninomiya
Patented Case View Patent ↗
Granted: May 25, 2004 Filed: Jul 29, 2002
Inventors
Yun-Yu Wang
Johnathan E. Faltermeier
Colleen Snavely
Michael Maldei
Michael Iwatake
David M. Dobuzinsky
Ravikumar Ramachandran
Viraj Y. Sardesai
Philip L. Flaitz
Lisa Y. Ninomiya
Assignees (at issue)
Infineon Technologies AG
International Business Machines Corporation

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Quick Facts
Patent No.
US 6,740,568
App. No.
10/206,875
Filed
2002-07-29
Granted
2004-05-25
Kind
B2