IP Library › Granted Patent US 6,740,910
Granted Patent Utility
US 6,740,910 · App. 10/352,830

Field-effect transistor, circuit configuration and method of fabricating a field-effect transistor

Inventors: Wolfgang Roesner, Richard Luyken, Johannes Kretz
Patented Case View Patent ↗
Granted: May 25, 2004 Filed: Jan 28, 2003
Inventors
Wolfgang Roesner
Richard Luyken
Johannes Kretz
Assignee (at issue)
Infineon Technologies AG

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Quick Facts
Patent No.
US 6,740,910
App. No.
10/352,830
Filed
2003-01-28
Granted
2004-05-25
Kind
B2