Granted Patent
Utility
US 6,740,952 · App. 10/096,357
High withstand voltage semiconductor device
Inventors:
Naoto Fujishima, Akio Kitamura, Gen Tada, Masaru Saito
Patented Case
View Patent ↗
Granted: May 25, 2004
Filed: Mar 12, 2002
Inventors
Naoto Fujishima
Akio Kitamura
Gen Tada
Masaru Saito
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.