Granted Patent
Utility
US 6,743,289 · App. 10/073,506
Thermal annealing process for producing low defect density single crystal silicon
Inventors:
Robert J. Falster, Martin Jeffrey Binns, Alan Wang
Patented Case
View Patent ↗
Granted: Jun 1, 2004
Filed: Feb 11, 2002
Inventors
Robert J. Falster
Martin Jeffrey Binns
Alan Wang
Assignee (at issue)
MEMC Electronic Materials, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.